產品名稱：FIB和離子束濺射標準

Silicon Dioxide (SiO2)
Silicon wafers with thin films of silicon dioxide are available in thicknesses of 23, 50, 97 and 102.9nm. The oxide films are grown with a wet oxygen process, which insures a higher degree of uniformity than available using other processes. The wafers are 4" in diameter.

Prod #	Description	Unit

612-11

Silicon Dioxide Ion Sputter Calibration Standard, SiO2 (23 ± 0.23 nm) on 4" Si wafer

each

612-12

Silicon Dioxide Ion Sputter Calibration Standard, SiO2 (50 ± 2.5 nm) on 4" Si wafer

each

612-13

Silicon Dioxide Ion Sputter Calibration Standard, SiO2 (97 ± 3.8 nm) on 4" Si wafer

each

612-14

Silicon Dioxide Ion Sputter Calibration Standard, SiO2 (102.9 ± 2.5 nm) on 4" Si wafer

each

Silicon Nitride (Si3N4)
100nm Silicon Nitride (CVD) films deposited on a ~1 x 3cm piece of silicon wafer.

Prod #	Description	Unit

612-20

Silicon Nitride Ion Sputter Calibration Standard, Si3N4 on 1x3cm Si

each

Tantalum Pentoxide (Ta2O5)
Films of tantalum pentoxide (~100nm) are anodically grown on 0.5mm thick tantalum foil. The standards are ~37x37mm. The thickness accuracy is ~5%.

Prod #	Description	Unit

612-30

Tantalum Pentoxide Ion Sputter Calibration Standard, Ta2O5 (~100nm) on 37x37mm Ta foil

each

Nickel / Chromium
Consisting of 12 alternating layers: 6 layers of Cr (~53nm) and 6 layers of Ni (~64nm) for a total thickness of ~700nm with a maximum variation across the 75mm production wafer of ±2%. Standard is on a 1x3cm section of a polished silicon wafer. The mass density of Cr and Ni was measured using electron beam excitation and measuring characteristic X-ray intensities.

Prod #	Description	Unit

612-40

Nickel / Chromium Ion Sputter Calibration Standard, Ni / Cr (12 layers) on 1x3cm Si

each