产品详情
  • 产品名称:FIB和离子束溅射标准

  • 产品型号:612
  • 产品厂商:其它品牌
  • 产品文档:
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简单介绍:
FIB和离子束溅射标准 Ion Sputter Standards manufactured to the highest precision for calibrating the sputtering rate of sputter ion guns.
详情介绍:

Silicon Dioxide (SiO2)
Silicon wafers with thin films of silicon dioxide are available in thicknesses of 23, 50, 97 and 102.9nm. The oxide films are grown with a wet oxygen process, which insures a higher degree of uniformity than available using other processes. The wafers are 4" in diameter.
Prod # Description Unit
612-11
Silicon Dioxide Ion Sputter Calibration Standard, SiO2 (23 ± 0.23 nm) on 4" Si wafer
each
612-12
Silicon Dioxide Ion Sputter Calibration Standard, SiO2 (50 ± 2.5 nm) on 4" Si wafer
each
612-13
Silicon Dioxide Ion Sputter Calibration Standard, SiO2 (97 ± 3.8 nm) on 4" Si wafer
each
612-14
Silicon Dioxide Ion Sputter Calibration Standard, SiO2 (102.9 ± 2.5 nm) on 4" Si wafer
each

Silicon Nitride (Si3N4)
100nm Silicon Nitride (CVD) films deposited on a ~1 x 3cm piece of silicon wafer.
Prod # Description Unit
612-20
Silicon Nitride Ion Sputter Calibration Standard, Si3N4 on 1x3cm Si
each
Tantalum Pentoxide (Ta2O5)
Films of tantalum pentoxide (~100nm) are anodically grown on 0.5mm thick tantalum foil. The standards are ~37x37mm. The thickness accuracy is ~5%.
Prod # Description Unit
612-30
Tantalum Pentoxide Ion Sputter Calibration Standard, Ta2O5 (~100nm) on 37x37mm Ta foil
each
Nickel / Chromium
Consisting of 12 alternating layers: 6 layers of Cr (~53nm) and 6 layers of Ni (~64nm) for a total thickness of ~700nm with a maximum variation across the 75mm production wafer of ±2%. Standard is on a 1x3cm section of a polished silicon wafer. The mass density of Cr and Ni was measured using electron beam excitation and measuring characteristic X-ray intensities.
Prod # Description Unit
612-40
Nickel / Chromium Ion Sputter Calibration Standard, Ni / Cr (12 layers) on 1x3cm Si
each

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